CSD18541F5 Transistors Power MOSFET

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Veristrong Industrial Centre, 34-36 Huotan Au Bei Wan Street, Sha Tin, New Territories, Hong Kong

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The Texas Instruments CSD18541F5 is an N-Channel power MOSFET designed for surface-mount applications. It features a low on-resistance, ultra-low gate charge (Qg) and drain-to-source capacitance (Qgd), making it suitable for high-frequency switching applications. The device has a small footprint of 1.53 mm x 0.77 mm and a low profile height of 0.36 mm, allowing for compact designs. Additionally, the CSD18541F5 includes an integrated ESD protection diode to prevent damage from electrostatic discharges. This product is lead-free, halogen-free, and RoHS compliant, making it suitable for environmentally friendly designs.

Features

According to the product information, the features of CSD18541F5 are:

Low on-resistance

Ultra-low Qg and Qgd

Ultra-small footprint (1.53 mm × 0.77 mm)

Low profile (0.36-mm height)

Integrated ESD protection diode

Lead and halogen free

RoHS compliant

These features suggest that the CSD18541F5 is a high-performance, low-power N-channel power MOSFET suitable for various applications such as portable electronics, automotive systems, and industrial equipment.

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